2N1711 epitaxial planar npn description the 2N1711 is a silicon planar epitaxial npn transistor in jedec to-39 metal case. it is intented for use in high performance amplifier, oscillator and switching circuits. the 2N1711 is also used to advantage in amplifiers where low noise is an important factor. ? internal schematic diagram september 2002 absolute maximum ratings symbol parameter value unit v cbo collector-base voltage (i e = 0) 75 v v cer collector-emitter voltage (r be 10 w ) 50 v v ebo emitter-base voltage (i c = 0) 7 v i c collector current 500 ma p tot total dissipation at t amb 25 o c at t c 25 o c at t c 100 o c 0.8 3 1.7 w w w t stg storage temperature -65 to 175 o c t j max. operating junction temperature 175 o c to-39 1/4
thermal data r thj-case r thj-amb thermal resistance junction-case max thermal resistance junction-ambient max 50 187.5 o c/w o c/w electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i cbo collector cut-off current (i e = 0) v cb = 60 v v cb = 60 v t c = 150 o c 10 10 na m a i ebo emitter cut-off current (i c = 0) v eb = 5 v 5 na v (br)cbo collector-base breakdown voltage (i e = 0) i c = 100 m a 75 v v (br)cer * collector-emitter breakdown voltage (r be 10 w ) i c = 10 ma 50 v v (br)ebo emitter-base breakdown voltage (i c = 0) i e = 100 m a 7v v ce(sat) * collector-emitter saturation voltage i c = 150 ma i b = 15 ma 0.5 1.5 v v be(sat) * base-emitter saturation voltage i c = 150 ma i b = 15 ma 0.95 1.3 v h fe * dc current gain i c = 10 m a v ce = 10 v i c = 0.1 ma v ce = 10 v i c = 10 ma v ce = 10 v i c = 150 ma v ce = 10 v i c = 500 ma v ce = 10 v i c = 10 ma v ce = 10 v t c = -55 o c 20 35 75 100 40 35 60 80 130 130 75 65 300 h fe small signal current gain i c = 1 ma v ce = 10 v f = 1 khz 70 135 300 f t transition frequency i c = 50 ma v ce = 10 v f = 20 mhz 70 100 mhz c ebo emitter-base capacitance i c = 0 v eb = 0.5 v f = 1 mhz 50 80 pf c cbo collector-base capacitance i e = 0 v cb = 10 v f = 1 mhz 18 25 pf nf noise figure i c = 0.3 ma v ce = 10 v r g = 510 w f = 1 khz 3.5 8 db h ie input impedance i c = 1 ma v ce = 5 v f = 1 khz 4.4 k w h re reverse voltage ratio i c = 1 ma v ce = 5 v f = 1 khz 7.3 x 10 -4 h oe output admittance i c = 1 ma v ce = 5 v f = 1 khz 23.8 m s * pulsed: pulse duration = 300 m s, duty cycle 1 % 2N1711 2/4
dim. mm inch min. typ. max. min. typ. max. a 12.7 0.500 b0.490.019 d6.60.260 e8.50.334 f9.40.370 g 5.08 0.200 h1.20.047 i0.90.035 l45 o (typ.) l g i d a f e b h p008b to-39 mechanical data 2N1711 3/4
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